Technical Program Committee

Track A: Quality and Reliability Assessment Techniques and Methods for Devices and Systems

Design for reliability; Built-in reliability; Virtual qualification; Reliability simulation; Advanced models for reliability prediction; Reliability test structures; Limits to accelerated tests; Screening methods; Yield/reliability relationship; Obsolescence; Counterfeiting.

Chairs:
E. OLTHOF – NXP Semiconductors, The Netherlands
C. SALM – University of Twente, The Netherlands

Members:
U. ABELEIN – Infineon Technologies, Germany 
P. BENECH – G2eLab, France 
C. CIOFI – University of Messina, Italy 
D. DANKOVIC – Faculty of Electronic Engineering, University of Niš, Serbia
V. DAVIDOVIC – Faculty of Electronic Engineering, University of Niš, Serbia 
S. DE LEON ALDACO – Universidad Internacional Iberoamericana, Mexico
L. DOBRESCU – National University of Science and Technology Politehnica Bucharest, Romania
J. JAESCHKE – Fraunhofer Institute for Reliability and Microintegration, Germany
A. MIDDENDORF – Fraunhofer Institute for Reliability and Microintegration, Germany
K. NAKAMAE – Osaka University, Japan
A. PADOVANI – University of Modena and Reggio Emilia, Italy
N. SELIGER – University of Applied Sciences Rosenheim, Germany 
O. WITTLER – Fraunhofer Institute for Reliability and Microintegration IZM, Germany

Track B: Reliability for Nanoelectronics

Fundamental semiconductor failure mechanisms and process-related reliability issues; Passivation stability and interface degradation; Hot-carrier injection; Negative-bias temperature instability (NBTI); Time-dependent dielec­tric breakdown {TDDB); Reliability of high-k dielectrics, advanced gate stacks, and metal gates; Low-k dielectrics and Cu interconnects; Metal migration: electromigration, stress migration, and thermo-mechanical aspects; Non­volatile and programmable memory cell reliability; Silicon-on-Insulator (SOI) device reliability challenges; Circuit­level reliability and system integration aspects; Nanoelectronic devices and scaling-induced effects; Reliability of novel nanoelectronic materials for advanced solid-state devices; 2D materials: variability, reliability, and device integration challenges; Emerging technologies: FeFETs, FeRAM, and other beyond-CMOS concepts.

Chairs:
M. WALTL – Institute for Microelectronics, TU Wien, Austria
A. GRILL – IMEC, Belgium
K. WASCHNECK – Infineon Technologies, Germany

Members: 
J. BERNSTEIN – Ariel University, Israel
C. BOGNER – Infineon Technologies, Germany; Institute for Microelectronics TU Wien, Austria
X. FEDERSPIEL – STMicroelectronics, Switzerland
C. L. GAN – Nanyang Technological University, Singapore
E. LANGER – Infineon Technologies, Germany
C. LIU – Huawei Technologies R&D, Belgium
S. LUCZAK – Faculty of Mechatronics, Warsaw University of Technology, Poland
A. MEYER – Globalfoundries, Germany
T. MOTA FRUTUOSO – CEA-Leti, France
S. OBERHOFF – Robert Bosch GmbH, Germany
L. PIRRO – Globalfoundries, Germany
C. POULAIN – Atomic Energy and Alternative Energies Commission, France
F. M. PUGLISI – University of Modena and Reggio Emilia, Italy
N. RAGHAVAN – Singapore University of Technology and Design (SUTD), Singapore
S. RAMEY – Intel, United States
R. RODRIGUEZ – Autonomous University of Barcelona, Spain
J. STATHIS – IBM, United States
N. SUZUMURA – Renesas Electronics Corporation, Japan
C. THEODOROU – IMEP-LAHC, Grenoble INP, France
M. TOLEDANO LUQUE – Globalfoundries, Germany
D. VARGHESE – Texas Instruments, Analog Technology Development, United States
A. VIEY – CEA-Leti, France

Track C: Progress in Failure Analysis: Defect Detection and Analysis

Electron-, ion-, and optical beam techniques; Scanning probe techniques; Static or dynamic techniques; Backside techniques; Acoustic microscopy; Electric or magnetic field-based techniques; Electrical-, thermal-, and thermo­mechanical characterization; Sample preparation; Construction analysis; Failure analysis: case studies.

Chairs:
G. MURA – DIEE University of Cagliari, Italy
S. CHEF – Temasek Laboratories @ NTU, Singapore
F. ALTMANN – Fraunhofer IMWS, Germany
C. HOBERT – Sector Technologies SAS, France

Members:
G. BASCOUL – CNES, France
F. BEAUDOIN – Globalfoundries, Germany
S. H. GOH – Qualcomm, United States
A. GRIFFONI – De’ Longhi Appliances s.r.l., Italy
R. HEIDERHOFF – University of Wuppertal, Germany
K. JACOBS – IMEC, Belgium
S. LI – Infineon Technologies, United States
W. LO – NVIDIA, United States
M. MEDDA – STMicroelectronics, Switzerland
S. OBERHOFF – Robert Bosch GmbH, Germany
A. C. T. QUAH – Globalfoundries, Germany
G. SALVIATI – IMEM-CNR, Italy
J. TANG – JIACO Instruments, The Netherlands
H. TERADA – HAMAMATSU PHTONICS K.K., Japan
C.-C. TSAO – Thermo Fisher Scientfic, United States

Track D: Reliability of Microwave Devices and Circuits

Reliability of GaN HEMTs, GaAs pHEMTs, lnP HBTs, and SiGe devices; High-frequency degradation mechanisms and RF stress effects; Trap dynamics, charge instabilities, and current collapse in microwave devices; Reliability under high-power, high-frequency, and pulsed operation; Thermal management and self-heating challenges in RF power devices; Packaging, interconnects, and integration in RF and mm-wave systems; Reliability in applications such as 5G/6G, radar, satellite, and defense systems.

Chair:
J.-G. TARTARIN – LAAS-CNRS & University of Toulouse, France

Members:
J. JIMENEZ – Qorvo, United States
L. MICHALAS – Department of Electrical and Computer Engineering, Democritus University of Thrace, Greece
D. POGANY – Institute of Solid State Electronics, TU Wien, Austria
G. VERZELLESI – University of Modena and Reggio Emilia, Italy

Track E: Packaging- and Assembly Reliability and Failure Analysis

Electrical modeling and simulations for advanced packaging; Mechanical modeling and thermomechanical stress simulations; Reliability of 3D integration and through-silicon vias (TSVs); Flip-chip and solder joint reliability; Advanced substrates and interposer technologies; Chip/package interaction and system-in-package reliability; Failure analysis methods for packaging and assembly-induced degradation.

Chairs:
P. COVA – University of Parma, Italy
R. RONGEN – NXP Semiconductors, The Netherlands
O. WITTLER – Fraunhofer, Germany
K. WEIDE-ZAAGE – RESRI IMS Leibniz Universität Hannover, Germany

Members:
C. BUTTAY – INSA Lyon, France
G. CELLERE – Applied Materials, United States
C.-H. CHEN – International College of Semiconductor Technology, National Yangming Chiaotung University, Taiwan
N. DELMONTE – Department of Engineering and Architecture – University of Parma, Italy
J. FAN – Delft University of Technology, The Netherlands
C. GAUTIER – Presto Engineering, France
J.-B. JULLIEN – ArianeGroup, France
G. KHATIBI – Institute of Chemical Technologies and Analytics, TU Wien, Austria
A. MAVINKURVE – NXP Semiconductors, The Netherlands
M. MEDDA – STMicroelectronics, Switzerland
M. MENEGHINI – Department of Information Engineering, University of Padova, Italy
R. MENOZZI – University of Parma, Italy
M. F. MOHD SABRI – University of Malaya, Malaysia
S. MOREAU – CEA-Leti, France
D. SANTORO – University of Parma, Italy
D. SPAGGIARI – University of Parma, Italy
M. WURZ – Leibniz Universität Hannover, Germany
W. VAN DRIEL – Delft University of Technology, The Netherlands

Track F1 : Power Devices Reliability: Smart-Power Devices and Silicon Power Devices

Reliability of Smart-Power ICs and integrated drivers; Silicon MOSFET and IGBT aging mechanisms; Gate oxide integrity and charge trapping; Hot-carrier and BTI degradation in high-voltage devices; Lifetime prediction and physics-based modeling; Package stress, interconnect reliability, and thermal cycling; Robustness under automotive and industrial mission profiles.

Chairs:
M. NELHIEBEL – Infineon/KAI, Germany
T. BASLER – TU Chemnitz, Germany

Members:
M. BOUARROUDJ – SATIE, France
G. BREGLIO – University of Naples Federico II, Italy
A. CASTELLAZZI – Solid-State Power Processing Lab, Engineering Faculty, Kyoto University of Advanced Science (KUAS), Japan
P. COVA – University of Parma, Italy
L. DUPONT – IFSTTAR; SATIE, France
G. GROOS – University of the Bundeswehr Munich, Germany
A. IRACE – University of Naples Federico II, Italy
B. JI – School of Engineering, University of Leicester, United Kingdom
J. JIMENEZ – Qorvo, United States
G. KHATIBI – Institute of Chemical Technologies and Analytics, TU Wien, Austria
S. LEFEBVRE – SATIE, France
M.-L. LOCATELLI – LAPLACE LAboratory, France
A. MIDDENDORF – Fraunhofer Institute for Reliability and Microintegration, Germany
M. PITON – ALSTOM, France
F. RICHARDEAU – Lab. LAPLACE; CNRS; University of Toulouse, France
N. SELIGER – University of Applied Sciences Rosenheim, Germany
H. SUZUKI – HItachi, Ltd., Japan
H. WANG – Aalborg University, Denmark

Track F2: Power Devices Reliability: Wide-Bandgap Devices

Reliability of SiC MOSFETs and GaN HEMTs; Threshold voltage stability and interface states; Short-circuit and avalanche ruggedness in WBG devices; Defect-related degradation and trap dynamics; High-temperature and high-frequency stress testing; Packaging and integration challenges for WBG modules; Reliability in fast-charging, renewable, and aerospace applications.

Chairs:
M. MENEGHINI – University of Padova, Italy
D. TRÉMOUILLES – LAAS-CNRS, France
V. RUSTICHELLI – IRT Saint Exupery, France

Members:
M. ALAM – IRT Saint Exupery, France
M. BORGA – IMEC, Belgium
B. BOUDART – GREYC, France
G. BUSATTO – DAEIMI, University of Cassino, Italy
A. CASTELLAZZI – Solid-State Power Processing Lab, Engineering Faculty, Kyoto University of Advanced Science (KUAS), Japan
A. CHINI – University of Modena and Reggio Emilia, Italy
P. FRIEDRICHS – Infineon Technologies, Germany
F. IUCOLANO – STMicroelectronics, Switzerland
T. KIMOTO – Kyoto University of Advanced Science (KUAS), Japan
J. MATEOS – University of Salamanca, Spain
S. MOREAU – CEA-Leti, France
H. MOREL – INSA/Ampère Laboratory, France
M. NELHIEBEL – Infineon Technologies/KAI, Germany
C. OSTERMAIER – Infineon Technologies, Germany
X. PERPIÑÀ – IBM, CNM, Spain
D. PLANSON – Ampère Laboratory, France
D. POGANY – Institute of Solid State Electronics, TU Wien, Austria
K. SMITH – VisIC Technologies, Austria
A. N. TALLARICO – University of Bologna, Italy
L. THEOLIER – University of Bordeaux, France
G. TOULON – AlpSemi, France
W. VANDENDAELE – CEA-Leti, France
G. VERZELLESI – University of Modena and Reggio Emilia, Italy
N. ZAGNI – University of Modena and Reggio Emilia, Italy

Track F3: Power Devices Reliability: Power Electronic Systems

System-level reliability and fault tolerance; Reliability-oriented design of converters and inverters; Mission-profile-based testing and lifetime modeling; Reliability of modules, passives, and interconnects; Condition monitoring and predictive maintenance; Thermal management and cooling technologies; Standards, qualification, and field return analysis.

Chairs: 
H. WANG – Aalborg University, Denmark
O. HEGAZY – Free University of Brussels, Belgium

Members:
C. BANC – Safran Electronics & Defense, Germany
A. BORGHESE – University of Naples Federico II, Italy
M. BOUARROUDJ – SATIE, France
A. CASTELLAZZI – Solid-State Power Processing Lab, Engineering Faculty, Kyoto University of Advanced Science (KUAS), Japan
B. COUGO – IRT Saint-Exupery, France
P. COVA – University of Parma, Italy
N. DEGRENNE – Mitsubishi Electric Research Centre Europe, France
E. DENG – Hefei University of Technology, China
P. DHERBECOURT – Université de Rouen Groupe de Physique des Matériaux, France
L. DUPONT – IFSTTAR; SATIE, France
A. IBRAHIM – University Gustave Eiffel, France
B. JI – School of Engineering, University of Leicester, United Kingdom
S. LEFEBVRE – SATIE, France
Y. LIU – Wuhan University, China
H. LUO – Zhejiang University, China
C. LV – Xi’an Jiaotong University, China
H. MOREL – INSA/Ampère Laboratory, France
M. NOVAK – Aalborg University, Denmark
F. RICHARDEAU – Lab. LAPLACE; CNRS; University of Toulouse, France
R. RIVA – IRT Saint Exupery, France
V. RUSTICHELLI – IRT Saint Exupery, France
A. N. TALLARICO – University of Bologna, Italy
G. TOULON – AlpSemi, France
D. TRÉMOUILLES – LAAS-CNRS, France
Y. ZHANG – Hong Kong Polytechnic University, China

Track G: Photonics Reliability

Reliability and lifetime of solar cells (Si, thin-film, perovskite, tandem); Photovoltaic degradation mechanisms and encapsulation challenges; Reliability of optoelectronic devices: lasers, LEDs, and photodetectors; Displays: OLED, micro-LED, and electronic ink stability under operation; Organic and hybrid electronics: reliability of TFTs, OLEDs, and emerging flexible devices; Packaging, encapsulation, and environmental stability in photonic and optoelectronic systems; Reliability testing methods for accelerated stress, thermal cycling, and humidity exposure.

Chairs: 
M. GARCIA – III-V Lab, France
Y. DESHAYES – IMS Laboratory, France


Members:
L. BECHOU – IMS Laboratory; University of Bordeaux, France
M. BETTIATI – 3S PHOTONICS, France
M. BUFFOLO – University of Padova, Italy
A. GRIFFONI – De’ Longhi Appliances s.r.l., Italy
N. JAUSSEIN – THALES ALENIA SPACE, France
J. JIMENEZ – Qorvo, United States
M. KEIDLER – Osram Opto Semiconductor, Germany
L. MENDIZABAL – CEA-Leti, France
M. MENEGHINI – University of Padova, Italy

Track H: MEMS and Sensor Reliability

Reliability of MEMS devices: mechanical fatigue, stiction, and packaging challenges; MOEMS reliability: optical MEMS for communication, projection, and sensing; NEMS and nano-objects: scaling effects and reliability testing; Sensor reliability in harsh environments (automotive, aerospace, industrial); Bio-electronics and implantable devices: biocompatibility and long-term stability; Bio-sensors and nano-bio technologies for diagnostics and health monitoring; Environmental influences: humidity, corrosion, and contamination effects; Accelerated stress testing and lifetime prediction for micro- and nanosystems; Integration of MEMS/NEMS with ICs and heterogeneous systems.

Chair:
L. MICHALAS – Department of Electrical and Computer Engineering, Democritus University of Thrace, Greece

Members:
K. ALEXAKI – Institute of Molecular Biology and Biotechnology (IMBB); Foundation for Research and Technology – Hellas (FORTH), Greece
S. GARDELIS – National and Kapodistrian University of Athens, Greece
K. KIRYUKHINA – CNES, France
S. LUCZAK – Faculty of Mechatronics, Warsaw University of Technology, Poland
P. MORFOULI – Grenoble INP, France
S. OBERHOFF – Robert Bosch GmbH, Germany
G. PAPAIOANNOU – National and Kapodistrian University of Athens, Greece
C. POULAIN – Atomic Energy and Alternative Energies Commission, France
G. ROSS – Aalto University, Finland

Track I : Extreme Environments and Radiation

Reliability of devices and circuits under extreme thermal, mechanical, and environmental stress; Electrostatic discharge (ESD) and electrical overstress (EOS) robustness; Latch-up phenomena and protection strategies in ICs and power devices; Electromagnetic compatibility (EMC) and electromagnetic interference (EMI) in circuits and systems; Radiation effects on semiconductor devices, circuits, and power electronic systems; Hardening techniques for space, avionics and other applications; System-level resilience and qualification standards for harsh environments.

Chairs: 
F. PINTACUDA – ST Microelectronics, Switzerland
M. SIMICIC – IMEC, Belgium

Members:
K. ABOUDA – NXP EMC/ESD TOULOUSE, France
G. BOSELLI – Texas Instruments, United States
A. BOYER – LAAS-CNRS, France
P. GALY – STMicroelectronics, Switzerland
M. KHAZHINSKY – Silicon Labs, United States
G. MEJECAZE – CEA (Atomic Energy Commission), France
N. NOLHIER – LAAS-CNRS & University of Toulouse, France
M. OKUSHIMA – Renesas Electronics Corporation, Japan
D. POGANY – Institute of Solid State Electronics, TU Wien, Austria
V. POUGET – IES – CNRS, France
A. RAMANUJAN – Analog Devices Inc, United States
J.-M. REDOUTE – University of Liege, Belgium
M. STOCKINGER – NXP Semiconductors, The Netherlands
T. SUZUKI – Socionext Inc., Japan
H. WONG – City University of Hong Kong, China

Track J: Automotive and Industrial Electronic Reliability

Reliability challenges in electric and hybrid-electric vehicles (EVs, HEVs); Batteries, supercapacitors, and energy storage systems; Powertrain electronics and drivetrain reliability; Charging stations, fast-charging systems, and vehicle-to-grid (V2G) interfaces; Thermal management solutions for automotive and industrial electronics; Reliability of electronics in harsh automotive and industrial environments; Standards, qualification, and safety requirements for mobility and industry applications.

Chairs:
S. WACHTER – Bosch Engineering, Germany
C. HAMETNER – Institute for Microelectronics, TU Wien, Austria

Members:
M. JELOVIC – Institute of Mechanics and Mechatronics, TU Wien, Austria